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SEMICONDUCTOR
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
* 6A, 600V at TC = 25oC * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Hyperfast Anti-Parallel Diode
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
PACKAGING AVAILABILITY PART NUMBER HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS PACKAGE TO-220AB TO-262AA TO-263AB BRAND G3N60C3D G3N60C3D G3N60C3D
JEDEC TO-262AA
COLLECTOR (FLANGE)
A
EMITTER COLLECTOR GATE
JEDEC TO-263AB
M A
A
COLLECTOR (FLANGE) GATE EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A. Formerly Developmental Type TA49119.
G
E
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTP3N60C3D, HGT1S3N60C3D HGT1S3N60C3DS 600 6 3 24 20 30 18A at 480V 33 0.27 -40 to 150 260 8 UNITS V A A A V V W W/ oC oC oC s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Fig. 14. . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .tSC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 82.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
(c) Harris Corporation 1997
File Number
4140.1
3-9
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Electrical Specifications
PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 25V TJ = 150oC RG = 82 VGE = 15V L = 1mH VCE(PK) = 480V VCE(PK) = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 3.0 TYP 1.65 1.85 5.5 MAX 250 2.0 2.0 2.2 6.0 250 UNITS V A mA V V V
Gate-Emitter Threshold Voltage
VGE(TH) IGES SSOA
Gate-Emitter Leakage Current Switching SOA
18 2
-
nA A A
Gate-Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON)
IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V
-
8.3 10.8 13.8 5 10 325 130 85 245 2.0 22 17 -
13.5 17.3 400 275 2.5 28 22 3.75 3.0
V nC nC ns ns ns ns J J V ns ns
oC/W oC/W
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time
tD(ON)I tRI tD(OFF)I tFI EON EOFF VEC tRR
TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 82 L = 1mH
IEC = 3A IEC = 3A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s
-
Thermal Resistance
RJC
IGBT Diode
NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
3-10
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Typical Performance Curves
ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 20 18 16 14 12 10 8 6 4 2 0 4 6 8 10 12 14 TC = 150oC TC = 25oC TC = -40oC DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE = 15V 9.0V 8.5V 8.0V 7.5V 7.0V 10 PULSE DURATION = 250s DUTY CYCLE <0.5% TC = 25oC 12V
10V
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR-EMITTER CURRENT (A)
18 16 14 12 10 8 6 4 2 0 0
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V
ICE, COLLECTOR-EMITTER CURRENT (A)
20
20 18 16 14 12 10 8 6 4 2 0 0
PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V
TC = 25oC
TC = -40oC TC = 150oC TC = 25oC
TC = -40oC TC = 150oC
1
2
3
4
5
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
tSC , SHORT CIRCUIT WITHSTAND TIME (S)
ICE , DC COLLECTOR CURRENT (A)
VGE = 15V
6 5 4 3 2 1 0 25
12 10 tSC 8 ISC 6 4 2 0 10
60 50 40 30 20 10 0 15
50
75
100
125
150
TC , CASE TEMPERATURE (oC)
11 12 13 14 VGE , GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3-11
ISC, PEAK SHORT CIRCUIT CURRENT(A)
7
14
VCE = 360V, RGE = 82, TJ = 125oC
70
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Typical Performance Curves
20 tD(ON)I , TURN-ON DELAY TIME (ns)
(Continued)
500 tD(OFF)I , TURN-OFF DELAY TIME (ns) TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
400
VGE = 10V 10
300 VGE = 15V
VGE = 15V
VGE = 10V 200 1 2 3 4 5 6 7 8
3 1 2 3 4 5 6 7 8 ICE , COLLECTOR-EMITTER CURRENT (A)
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
80 tRI , TURN-ON RISE TIME (ns)
TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V VGE = 10V tFI , FALL TIME (ns)
300
TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
200 VGE = 10V or 15V
VGE = 15V 10
5
1
2
3
4
5
6
7
8
100
1
2
3
4
5
6
7
8
ICE , COLLECTOR-EMITTER CURRENT (A)
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
0.5 EON , TURN-ON ENERGY LOSS (mJ)
EOFF , TURN-OFF ENERGY LOSS (mJ)
TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
0.8 0.7 0.6
TJ = 150oC, RG = 82, L = 1mH, VCE(PK) = 480V
0.4 VGE = 10V 0.3
VGE = 10V or 15V 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8
0.2 VGE = 15V 0.1
0 1 2 3 4 5 6 7 8 ICE , COLLECTOR-EMITTER CURRENT (A)
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
3-12
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Typical Performance Curves
200 fMAX , OPERATING FREQUENCY (kHz)
(Continued)
TJ = 150oC, TC = 75oC RG = 82, L = 1mH
ICE, COLLECTOR-EMITTER CURRENT (A)
20 18 16 14 12 10 8 6 4 2 0 0
TJ = 150oC, VGE = 15V, RG = 82, L = 1mH
100
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) 10 RJC = 3.75oC/W 1 2 3
VGE = 15V
VGE = 10V 4 5 6
ICE, COLLECTOR-EMITTER CURRENT (A)
100 200 300 400 500 600 VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
FREQUENCY = 1MHz 400 C, CAPACITANCE (pF) CIES
VCE , COLLECTOR - EMITTER VOLTAGE (V)
500
600
15 VGE, GATE-EMITTER VOLTAGE (V)
480
12
300
360 VCE = 600V 240 VCE = 400V VCE = 200V IG REF = 1.060mA RL = 200 TC = 25oC 0 2 4 6 8 10 QG , GATE CHARGE (nC) 12
9
200 COES CRES 0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
100
120
3
0
0 14
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
ZJC , NORMALIZED THERMAL RESPONSE
100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC t1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
3-13
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Typical Performance Curves
15
(Continued)
30
TC = 25oC, dIEC/dt = 200A/s
IEC , FORWARD CURRENT (A)
tR , RECOVERY TIMES (ns)
12
25 trr 20 tA
9 100oC 6 150oC 25oC
15
10 tB 5
3
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VEC , FORWARD VOLTAGE (V)
0 0.5 1 IEC , FORWARD CURRENT (A) 4
FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP
FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT
Test Circuit and Waveform
L = 1mH RHRD460 VGE
90% 10% EOFF EON
RG = 82 +
VCE 90% VDD = 480V ICE 10% tD(OFF)I tFI tRI tD(ON)I
-
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Operating Frequency Information
Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
3-14
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBDTM LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. ECCOSORBDTM is a Trademark of Emerson and Cumming, Inc. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400
SEMICONDUCTOR
3-15

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